2023-12-06
【The Wall Street Journal.】Spirox and Southport Launch Industry-first Non-Destructive SiC Defect Inspection System: Saving Significant Costs and Increasing Output; Targeting the Compound Semiconductor Market
HSINCHU, Nov. 28, 2023 /PRNewswire/ -- Professional semiconductor solution provider Spirox Corporation (TWSE: 3055) in collaboration with its subsidiary, Southport Corporation, has jointly launched the industry-first JadeSiC-NK non-destructive defect inspection system. JadeSiC-NK employs advanced non-linear optical technology for whole wafer scanning of SiC substrates, identifying killer defects within the substrate. It substitutes the current high-cost, destructive KOH (potassium hydroxide) etching detection method, leading to increased production yields and process improvement. Calculating based on the need to etch two substrates for each SiC ingot, JadeSiC-NK can save a substrate manufacturer with 100 crystal growth furnaces approximately 7.68 million USD in annual costs incurred due to etching losses.
In the current global trend of rising environmental sustainability awareness, many countries have set phased policy goals for electric vehicles. The demand for SiC chips is rapidly surging, especially for the production of high-temperature and high-pressure SiC power semiconductor components used in electric vehicles. The supply is far from meeting the demand.
The quality of substrate materials for compound semiconductors determines the reliability and performance of SiC chips. However, SiC crystal growth is slow, and substrate crystal defects currently can only be inspected by sampling and mathematic interpolation with the destructive KOH etching method. This makes the cost of SiC chip manufacturing processes consistently high. Major SiC substrate manufacturers worldwide are proactively investing in capacity expansion and process improvement to increase market share. If SiC substrate and component manufacturers can implement comprehensive non-destructive inspection of materials in the manufacturing process, it will not only reduce the usage of harmful chemical solutions associated with KOH etching but also allows for the early detection of defects. This, in turn, enables effective process improvement, enhances yield, and ultimately demonstrates a significant advantage in the compound semiconductor market.
Please refer to the following report for details:
https://reurl.cc/3e0Wdj
In the current global trend of rising environmental sustainability awareness, many countries have set phased policy goals for electric vehicles. The demand for SiC chips is rapidly surging, especially for the production of high-temperature and high-pressure SiC power semiconductor components used in electric vehicles. The supply is far from meeting the demand.
The quality of substrate materials for compound semiconductors determines the reliability and performance of SiC chips. However, SiC crystal growth is slow, and substrate crystal defects currently can only be inspected by sampling and mathematic interpolation with the destructive KOH etching method. This makes the cost of SiC chip manufacturing processes consistently high. Major SiC substrate manufacturers worldwide are proactively investing in capacity expansion and process improvement to increase market share. If SiC substrate and component manufacturers can implement comprehensive non-destructive inspection of materials in the manufacturing process, it will not only reduce the usage of harmful chemical solutions associated with KOH etching but also allows for the early detection of defects. This, in turn, enables effective process improvement, enhances yield, and ultimately demonstrates a significant advantage in the compound semiconductor market.
Please refer to the following report for details:
https://reurl.cc/3e0Wdj
